Nanowerk
Atomic-thin interface tackles key bottleneck in 2D transistors
“Making the insulator thinner was only part of the challenge," stated Professor Wen-Hao Chang, the study's corresponding author at NYCU. “We also needed to safeguard the atomically thin semiconductor beneath.
Epitaxial interface engineering enables high-transconductance 2D transistors. (Image: Courtesy of the researchers)
A transistor controls current flow through a semiconductor using a gate, separated by an insulating layer called the gate dielectric. As transistors shrink, this dielectric must become thinner to retain control.
However, atomically thin semiconductors like molybdenum disulfide (MoS₂) have surfaces without dangling bonds, complicating the uniform deposition of traditional insulators. Defects and electrical interactions from this can scatter electrons and lower carrier mobility.
Read the full story at Nanowerk